Intersubband transitions in InAs/AISb quantum wells

J. Li, K. Kolokolov, Cun-Zheng Ning, D. C. Larraber, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, S. Sasa, M. Inoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k·p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsB.D. Weaver, M.O. Manasreh, C. Jagadish, S. Zollner
Number of pages12
StatePublished - 2002
Externally publishedYes
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: Dec 2 2002Dec 5 2002


OtherQuantum Confined Semiconductor Nanostructures
Country/TerritoryUnited States
CityBoston MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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