Interference phenomena due to a double bend in a quantum wire

J. C. Wu, M. N. Wybourne, W. Yindeepol, A. Weisshaar, S. M. Goodnick

Research output: Contribution to journalArticlepeer-review

73 Scopus citations


Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.

Original languageEnglish (US)
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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