Abstract
The application of interference enhanced Raman scattering to probe the structure of metal/semiconductor interfaces is described. This method is used to study the interface structures of Pd on hydrogenated amorphous Si(a-Si:H) with particular attention to the effects of a native oxide layer on the a-Si:H. It is found that for deposition on lightly oxidized a-Si:H, approximately 20 A of Pd is consumed for form a crystalline silicide interfacial structure with composition near Pd//2Si. Annealing causes growth of this phase and further consumption of Pd until a second phase of Pd//2Si is observed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 685-688 |
| Number of pages | 4 |
| Journal | Journal of vacuum science & technology |
| Volume | 19 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 1 1981 |
| Externally published | Yes |
| Event | Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: Jan 27 1981 → Jan 29 1981 |
ASJC Scopus subject areas
- General Engineering