Interfacial nanochemistry and electrical properties of Pb(Zr 0.3Ti0.7)O3 films on GaN/sapphire

W. Cao; S. Bhaskar; Jian Li; Sandwip Dey

doi:10.1016/j.tsf.2005.02.034

Interfacial nanochemistry and electrical properties of Pb(Zr _0.3Ti_0.7)O₃ films on GaN/sapphire

W. Cao
, S. Bhaskar
, Jian Li
, Sandwip Dey

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The structure, interfacial nanochemistry, and electrical properties of sol-gel derived Pb(Zr_0.3Ti_0.7)O₃ or PZT (30 / 70) thin films on metal-organic chemical vapor deposited (0001) GaN/sapphire substrates are reported. The X-ray diffraction analysis confirmed a phase-pure and highly oriented (111) PZT and Rutherford backscattering spectroscopy was used to ascertain the Zr/Ti ratio. The secondary ion mass spectrometry depth profile and electron energy loss spectroscopy with high energy and spatial resolution indicated a chemically sharp PZT/GaN interface with insignificant interdiffusion between Pb, Zr, or Ti in PZT and Ga and N in GaN. The lower capacitance density (C / A = 0.35 μF/cm²) and asymmetrical polarization (P ∼ 4 μC/cm²) hysteresis loops of PZT in Pt/PZT/GaN or metal-ferroelectric-semiconductor configuration were attributed to the high depolarization field (E_depol) within PZT. In contrast, PZT in Pt/PZT/Ru/GaN or metal-ferroelectric-metal configuration exhibited high capacitance density (C / A = 1.25 μF/cm²) and polarization (P ∼ 30 μC/cm²).

Original language	English (US)
Pages (from-to)	154-159
Number of pages	6
Journal	Thin Solid Films
Volume	484
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.02.034
State	Published - Jul 22 2005

Keywords

EELS
GaN
Interfaces
Pb(Zr, Ti)O

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.02.034

Cite this

@article{f53f711da2014032a3826a94e3fde222,

title = "Interfacial nanochemistry and electrical properties of Pb(Zr 0.3Ti0.7)O3 films on GaN/sapphire",

abstract = "The structure, interfacial nanochemistry, and electrical properties of sol-gel derived Pb(Zr0.3Ti0.7)O3 or PZT (30 / 70) thin films on metal-organic chemical vapor deposited (0001) GaN/sapphire substrates are reported. The X-ray diffraction analysis confirmed a phase-pure and highly oriented (111) PZT and Rutherford backscattering spectroscopy was used to ascertain the Zr/Ti ratio. The secondary ion mass spectrometry depth profile and electron energy loss spectroscopy with high energy and spatial resolution indicated a chemically sharp PZT/GaN interface with insignificant interdiffusion between Pb, Zr, or Ti in PZT and Ga and N in GaN. The lower capacitance density (C / A = 0.35 μF/cm2) and asymmetrical polarization (P ∼ 4 μC/cm2) hysteresis loops of PZT in Pt/PZT/GaN or metal-ferroelectric-semiconductor configuration were attributed to the high depolarization field (Edepol) within PZT. In contrast, PZT in Pt/PZT/Ru/GaN or metal-ferroelectric-metal configuration exhibited high capacitance density (C / A = 1.25 μF/cm2) and polarization (P ∼ 30 μC/cm2).",

keywords = "EELS, GaN, Interfaces, Pb(Zr, Ti)O",

author = "W. Cao and S. Bhaskar and Jian Li and Sandwip Dey",

note = "Funding Information: The authors wish to acknowledge the support of DARPA (contract No: 1236318-004) and members of this DARPA-sponsored consortium on RF MEMS devices: T. George, K.-ah Son, and B. J. Cheng of the MEMS Group at Jet Propulsion Lab; D. P. Weitekamp and B. Lambert of California Institute of Technology; M. A. Khan, G. Simin, and J. Yang of University of South Carolina; R. Fathauer of Arizona State University and Jet Propulsion Lab; S. Kiaei of Arizona State University. ",

year = "2005",

month = jul,

day = "22",

doi = "10.1016/j.tsf.2005.02.034",

language = "English (US)",

volume = "484",

pages = "154--159",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Interfacial nanochemistry and electrical properties of Pb(Zr 0.3Ti0.7)O3 films on GaN/sapphire

AU - Cao, W.

AU - Bhaskar, S.

AU - Li, Jian

AU - Dey, Sandwip

N1 - Funding Information: The authors wish to acknowledge the support of DARPA (contract No: 1236318-004) and members of this DARPA-sponsored consortium on RF MEMS devices: T. George, K.-ah Son, and B. J. Cheng of the MEMS Group at Jet Propulsion Lab; D. P. Weitekamp and B. Lambert of California Institute of Technology; M. A. Khan, G. Simin, and J. Yang of University of South Carolina; R. Fathauer of Arizona State University and Jet Propulsion Lab; S. Kiaei of Arizona State University.

PY - 2005/7/22

Y1 - 2005/7/22

N2 - The structure, interfacial nanochemistry, and electrical properties of sol-gel derived Pb(Zr0.3Ti0.7)O3 or PZT (30 / 70) thin films on metal-organic chemical vapor deposited (0001) GaN/sapphire substrates are reported. The X-ray diffraction analysis confirmed a phase-pure and highly oriented (111) PZT and Rutherford backscattering spectroscopy was used to ascertain the Zr/Ti ratio. The secondary ion mass spectrometry depth profile and electron energy loss spectroscopy with high energy and spatial resolution indicated a chemically sharp PZT/GaN interface with insignificant interdiffusion between Pb, Zr, or Ti in PZT and Ga and N in GaN. The lower capacitance density (C / A = 0.35 μF/cm2) and asymmetrical polarization (P ∼ 4 μC/cm2) hysteresis loops of PZT in Pt/PZT/GaN or metal-ferroelectric-semiconductor configuration were attributed to the high depolarization field (Edepol) within PZT. In contrast, PZT in Pt/PZT/Ru/GaN or metal-ferroelectric-metal configuration exhibited high capacitance density (C / A = 1.25 μF/cm2) and polarization (P ∼ 30 μC/cm2).

AB - The structure, interfacial nanochemistry, and electrical properties of sol-gel derived Pb(Zr0.3Ti0.7)O3 or PZT (30 / 70) thin films on metal-organic chemical vapor deposited (0001) GaN/sapphire substrates are reported. The X-ray diffraction analysis confirmed a phase-pure and highly oriented (111) PZT and Rutherford backscattering spectroscopy was used to ascertain the Zr/Ti ratio. The secondary ion mass spectrometry depth profile and electron energy loss spectroscopy with high energy and spatial resolution indicated a chemically sharp PZT/GaN interface with insignificant interdiffusion between Pb, Zr, or Ti in PZT and Ga and N in GaN. The lower capacitance density (C / A = 0.35 μF/cm2) and asymmetrical polarization (P ∼ 4 μC/cm2) hysteresis loops of PZT in Pt/PZT/GaN or metal-ferroelectric-semiconductor configuration were attributed to the high depolarization field (Edepol) within PZT. In contrast, PZT in Pt/PZT/Ru/GaN or metal-ferroelectric-metal configuration exhibited high capacitance density (C / A = 1.25 μF/cm2) and polarization (P ∼ 30 μC/cm2).

KW - EELS

KW - GaN

KW - Interfaces

KW - Pb(Zr, Ti)O

UR - https://www.scopus.com/pages/publications/19944373433

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U2 - 10.1016/j.tsf.2005.02.034

DO - 10.1016/j.tsf.2005.02.034

M3 - Article

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SN - 0040-6090

VL - 484

SP - 154

EP - 159

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

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