InGaN solar cell design by surface inversion caused by piezoelectric polarization

Balakrishnam Jampana; Andrew Melton; Muhammad Jamil; Ian Ferguson; Robert Opila; Christiana Honsberg

doi:10.1109/PVSC.2009.5411401

InGaN solar cell design by surface inversion caused by piezoelectric polarization

Balakrishnam Jampana, Andrew Melton, Muhammad Jamil, Ian Ferguson, Robert Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in "Silense" showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	2175-2178
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2009.5411401
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	6/7/09 → 6/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411401

Cite this

Jampana, B., Melton, A., Jamil, M., Ferguson, I., Opila, R., & Honsberg, C. (2009). InGaN solar cell design by surface inversion caused by piezoelectric polarization. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 2175-2178). Article 5411401 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411401

InGaN solar cell design by surface inversion caused by piezoelectric polarization. / Jampana, Balakrishnam; Melton, Andrew; Jamil, Muhammad et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 2175-2178 5411401 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jampana, B, Melton, A, Jamil, M, Ferguson, I, Opila, R & Honsberg, C 2009, InGaN solar cell design by surface inversion caused by piezoelectric polarization. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411401, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2175-2178, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411401

@inproceedings{f8321fbb316a4d8fa0a1a0bda23baa65,

title = "InGaN solar cell design by surface inversion caused by piezoelectric polarization",

abstract = "The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in {"}Silense{"} showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.",

author = "Balakrishnam Jampana and Andrew Melton and Muhammad Jamil and Ian Ferguson and Robert Opila and Christiana Honsberg",

year = "2009",

doi = "10.1109/PVSC.2009.5411401",

language = "English (US)",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2175--2178",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

TY - GEN

T1 - InGaN solar cell design by surface inversion caused by piezoelectric polarization

AU - Jampana, Balakrishnam

AU - Melton, Andrew

AU - Jamil, Muhammad

AU - Ferguson, Ian

AU - Opila, Robert

AU - Honsberg, Christiana

PY - 2009

Y1 - 2009

N2 - The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in "Silense" showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.

AB - The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The solar cell operation requires the formation of a depletion region. Conventionally, this is achieved by a p-n junction. The piezoelectric polarization introduces a strong band bending at the hetero-junction interface and hence creating a depletion region. The growth of a thin AlN or GaN epi-layer on InGaN introduces the required piezoelectric polarization to create a depletion region. This paper presents the polarization-incorporated simulations in "Silense" showing the depletion region formation by GaN or AlN epilayers on p-InGaN. Three structures are then MOCVD grown and characterized for crystal quality and electrical properties. The fabricated devices demonstrated the diode characteristics with an open-circuit voltages > 2.0 V.

UR - http://www.scopus.com/inward/record.url?scp=77951542733&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951542733&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2009.5411401

DO - 10.1109/PVSC.2009.5411401

M3 - Conference contribution

AN - SCOPUS:77951542733

SN - 9781424429509

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2175

EP - 2178

BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

InGaN solar cell design by surface inversion caused by piezoelectric polarization

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