Influence of spacer layer thickness on the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes

H. M. Yoo; S. M. Goodnick; J. R. Arthur

doi:10.1063/1.102660

Influence of spacer layer thickness on the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes

H. M. Yoo, S. M. Goodnick, J. R. Arthur

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We have investigated the dependence of the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes (RTDs) on spacer layer thickness. The measured peak to valley current ratio of the RTDs studied here is shown to improve while the current density through the RTDs decreases with increasing spacer layer thickness below a critical value. We find significant differences in the effect of the spacer layer thickness between AlGaAs/InGaAs and AlGaAs/GaAs RTDs, which we believe to be related to the relative quasi-bound state energies of the two systems.

Original language	English (US)
Pages (from-to)	84-86
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	1
DOIs	https://doi.org/10.1063/1.102660
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Influence of spacer layer thickness on the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes",

abstract = "We have investigated the dependence of the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes (RTDs) on spacer layer thickness. The measured peak to valley current ratio of the RTDs studied here is shown to improve while the current density through the RTDs decreases with increasing spacer layer thickness below a critical value. We find significant differences in the effect of the spacer layer thickness between AlGaAs/InGaAs and AlGaAs/GaAs RTDs, which we believe to be related to the relative quasi-bound state energies of the two systems.",

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year = "1990",

doi = "10.1063/1.102660",

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AU - Yoo, H. M.

AU - Goodnick, S. M.

AU - Arthur, J. R.

PY - 1990

Y1 - 1990

N2 - We have investigated the dependence of the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes (RTDs) on spacer layer thickness. The measured peak to valley current ratio of the RTDs studied here is shown to improve while the current density through the RTDs decreases with increasing spacer layer thickness below a critical value. We find significant differences in the effect of the spacer layer thickness between AlGaAs/InGaAs and AlGaAs/GaAs RTDs, which we believe to be related to the relative quasi-bound state energies of the two systems.

AB - We have investigated the dependence of the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes (RTDs) on spacer layer thickness. The measured peak to valley current ratio of the RTDs studied here is shown to improve while the current density through the RTDs decreases with increasing spacer layer thickness below a critical value. We find significant differences in the effect of the spacer layer thickness between AlGaAs/InGaAs and AlGaAs/GaAs RTDs, which we believe to be related to the relative quasi-bound state energies of the two systems.

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JF - Applied Physics Letters

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Influence of spacer layer thickness on the current-voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes

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