@inproceedings{96db0a1b43434ad794903c00b2a34de4,
title = "Influence of shielding on the thermal characteristics of GaN HEMTs",
abstract = "One of the major concerns in the operation of GaN HEMT devices is its thermal performance. Under high power operating conditions, current collapse has been observed in several experimental studies. In the present work, the effect of shielding the GaN HEMT structure on the thermal characteristics and the gate-edge electric field of the structure is being investigated. An electro-thermal device simulator that couples the Monte Carlo transport kernel, the Poisson kernel and a thermal solver has been developed at Arizona State University to model the physics behind the operation of this device.",
keywords = "Current collapse, Field-plate, GaN HEMTs, Self-heating, Shielding",
author = "Balaji Padmanabhan and Dragica Vasileska and Goodnick, {S. M.}",
note = "Publisher Copyright: {\textcopyright} 2012 IEEE.; 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 ; Conference date: 05-09-2012 Through 07-09-2012",
year = "2012",
language = "English (US)",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "237--240",
booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings",
}