Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces

S. P. Bremner; K. Ghosh; L. Nataraj; S. G. Cloutier; C. B. Honsberg

doi:10.1016/j.tsf.2010.07.060

Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces

S. P. Bremner, K. Ghosh, L. Nataraj, S. G. Cloutier, C. B. Honsberg

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The effects of Sb/As soak times, prior to growth of GaAsSb on GaAs were investigated by High Resolution X-Ray Diffraction (HRXRD) and photoluminescence (PL). Multiple quantum well samples with soak times of 0 s, 30 s and 60 s were grown at 500 °C with nominally identical Sb and As fluxes. HRXRD results show that a 30 s soak minimizes diffuse scattering seen around superlattice peaks in the reciprocal space maps, an effect attributed to corrugations in the GaAs-GaAsSb interface. An inferred band diagram calculated using a four band k.p model and modified taking into account the HRXRD results was used to explain PL spectra taken for each sample at 80 K. It is concluded that an optimum soak time exists for GaASb growth on GaAs, determined by the growth conditions.

Original language	English (US)
Pages (from-to)	64-68
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2010.07.060
State	Published - Oct 29 2010
Externally published	Yes

Keywords

Gallium Arsenide Antimonide
Interfaces
Molecular beam epitaxy
Photoluminescence
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces",

abstract = "The effects of Sb/As soak times, prior to growth of GaAsSb on GaAs were investigated by High Resolution X-Ray Diffraction (HRXRD) and photoluminescence (PL). Multiple quantum well samples with soak times of 0 s, 30 s and 60 s were grown at 500 °C with nominally identical Sb and As fluxes. HRXRD results show that a 30 s soak minimizes diffuse scattering seen around superlattice peaks in the reciprocal space maps, an effect attributed to corrugations in the GaAs-GaAsSb interface. An inferred band diagram calculated using a four band k.p model and modified taking into account the HRXRD results was used to explain PL spectra taken for each sample at 80 K. It is concluded that an optimum soak time exists for GaASb growth on GaAs, determined by the growth conditions.",

keywords = "Gallium Arsenide Antimonide, Interfaces, Molecular beam epitaxy, Photoluminescence, X-ray diffraction",

author = "Bremner, {S. P.} and K. Ghosh and L. Nataraj and Cloutier, {S. G.} and Honsberg, {C. B.}",

note = "Funding Information: S. P. Bremner gratefully acknowledges N. N. Faleev for many useful comments and helpful suggestions when interpreting the X-ray diffraction results and S. N. Dahal for the band structure calculations. The authors also acknowledge the reviewers for insightful comments and suggestions. This work was funded through the National Renewable Energy Laboratory (NREL) sub-contract XAT-5-44277-01 and the Department of Energy contract DE-FG02-07ER46359 .",

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doi = "10.1016/j.tsf.2010.07.060",

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AU - Bremner, S. P.

AU - Ghosh, K.

AU - Nataraj, L.

AU - Cloutier, S. G.

AU - Honsberg, C. B.

N1 - Funding Information: S. P. Bremner gratefully acknowledges N. N. Faleev for many useful comments and helpful suggestions when interpreting the X-ray diffraction results and S. N. Dahal for the band structure calculations. The authors also acknowledge the reviewers for insightful comments and suggestions. This work was funded through the National Renewable Energy Laboratory (NREL) sub-contract XAT-5-44277-01 and the Department of Energy contract DE-FG02-07ER46359 .

PY - 2010/10/29

Y1 - 2010/10/29

N2 - The effects of Sb/As soak times, prior to growth of GaAsSb on GaAs were investigated by High Resolution X-Ray Diffraction (HRXRD) and photoluminescence (PL). Multiple quantum well samples with soak times of 0 s, 30 s and 60 s were grown at 500 °C with nominally identical Sb and As fluxes. HRXRD results show that a 30 s soak minimizes diffuse scattering seen around superlattice peaks in the reciprocal space maps, an effect attributed to corrugations in the GaAs-GaAsSb interface. An inferred band diagram calculated using a four band k.p model and modified taking into account the HRXRD results was used to explain PL spectra taken for each sample at 80 K. It is concluded that an optimum soak time exists for GaASb growth on GaAs, determined by the growth conditions.

AB - The effects of Sb/As soak times, prior to growth of GaAsSb on GaAs were investigated by High Resolution X-Ray Diffraction (HRXRD) and photoluminescence (PL). Multiple quantum well samples with soak times of 0 s, 30 s and 60 s were grown at 500 °C with nominally identical Sb and As fluxes. HRXRD results show that a 30 s soak minimizes diffuse scattering seen around superlattice peaks in the reciprocal space maps, an effect attributed to corrugations in the GaAs-GaAsSb interface. An inferred band diagram calculated using a four band k.p model and modified taking into account the HRXRD results was used to explain PL spectra taken for each sample at 80 K. It is concluded that an optimum soak time exists for GaASb growth on GaAs, determined by the growth conditions.

KW - Gallium Arsenide Antimonide

KW - Interfaces

KW - Molecular beam epitaxy

KW - Photoluminescence

KW - X-ray diffraction

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Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces

Abstract

Keywords

ASJC Scopus subject areas

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