@inproceedings{91bf7040b3824923b555e5cbcf59ec7f,
title = "Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers",
abstract = "We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of nonradiative recombination to the threshold current density (Jth) and a high characteristic temperature (T0) of 73K at room temperature.",
author = "N. Hossain and K. Hild and Jin, {S. R.} and Sweeney, {S. J.} and Yu, {S. Q.} and Shane Johnson and D. Ding and Yong-Hang Zhang",
year = "2010",
doi = "10.1109/PGC.2010.5706061",
language = "English (US)",
isbn = "9781424498826",
series = "2010 Photonics Global Conference, PGC 2010",
booktitle = "2010 Photonics Global Conference, PGC 2010",
note = "2010 Photonics Global Conference, PGC 2010 ; Conference date: 14-12-2010 Through 16-12-2010",
}