InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications

Oray O. Cellek, Hua Li, Xiao Meng Shen, Zhiyuan Lin, Elizabeth H. Steenbergen, Ding Ding, Shi Liu, Qiang Zhang, Ha Sul Kim, Jin Fan, Michael J. Dinezza, W. Hank G Dettlaff, Preston T. Webster, Zhaoyu He, Jing Jing Li, Shane Johnson, David Smith, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XXXVIII
ISBN (Print)9780819490315
StatePublished - 2012
Event38th Conference on Infrared Technology and Applications - Baltimore, MD, United States
Duration: Apr 23 2012Apr 27 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


Other38th Conference on Infrared Technology and Applications
Country/TerritoryUnited States
CityBaltimore, MD


  • Infrared photodetector
  • focal plane array
  • molecular beam epitaxy
  • photoluminescence
  • type-II superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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