In Situ Remote H-Plasma Cleaning of Patterned si-SiO2 Surfaces

R. J. Carter, T. P. Schneider, J. S. Montgomery, R. J. Nemanich

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22 Scopus citations


A RF H-plasma exposure was used to clean the surface of Si-SiO2 patterned wafers. The areal coverage of SiO2 to bare Si was 4 to 1, and the patterns were long strips, small squares, and large open regions. The plasma-surface etching was monitored by residual gas analysis (RGA). The RGA spectra indicated etching of the Si surface at temperatures below 400°C and no detectable by-products due to interactions with the SiO2 regions for temperatures ˂450°C. The patterned surfaces were characterized with low energy electron diffraction (LEED) (from the bare Si regions) and atomic force microscopy (AFM). The LEED patterns indicate 1 X 1 and 2 x 1 surface symmetries at 300 and 450°C, respectively. The sharpness of the LEED patterns as well as the 2x1 reconstruction indicated that the H-plasma cleaned the bare Si regions. In addition, AFM measurements indicated that the Si and SiO2 surface rms roughnesses do not vary significantly due to the H-plasma exposure. It can be concluded from the RGA and AFM data that the remote H-plasma process at 450°C cleaned the surface and did not significantly react with either the Si or SiO2 regions.

Original languageEnglish (US)
Pages (from-to)3136-3140
Number of pages5
JournalJournal of the Electrochemical Society
Issue number11
StatePublished - 1994
Externally publishedYes


  • contamination
  • hydrogen
  • plasma applications etching
  • remote handling
  • silicon compounds
  • surface cleaning

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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