Improved uniformity of resistive switching behaviors in Hf O₂ thin films with embedded Al layers

A technical solution is presented to improve the uniformity of Hf O ₂ -based resistive switching memory by embedding thin Al layers between Hf O₂ and electrode layers. Compared with those pure Hf O₂ devices, a remarkably improved uniformity of switching parameters such as forming voltages, set voltages, and resistances in high/low states was demonstrated in the Hf O₂ devices with embedded Al layers. Al atoms are assumed to diffuse into Hf O₂ thin films and are intended to localize oxygen vacancies due to reduced oxygen vacancy formation energy, thus stabilizing the generation of conductive filaments, which helps improve the resistive switching uniformity.