Improved thermal stability of indium zinc oxide TFTs by low temperature post annealing

A. Indluru, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). We have found that there is an optimum annealing time of 48 hours for the best performance and elevated temperature stability. The 48 hour annealed TFTs showed a stable turn-on voltage, and sub-threshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state-density at the semiconductor/insulator interface, and curing of the defects states in the band-gap of IZO.

Original languageEnglish (US)
Title of host publicationThin Film Transistors 10, TFT 10
PublisherElectrochemical Society Inc.
Number of pages8
ISBN (Electronic)9781607681748
ISBN (Print)9781566778244
StatePublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)


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