@inproceedings{f0c3c0ea714b49da9343896593081fb4,
title = "Improved thermal stability of indium zinc oxide TFTs by low temperature post annealing",
abstract = "We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). We have found that there is an optimum annealing time of 48 hours for the best performance and elevated temperature stability. The 48 hour annealed TFTs showed a stable turn-on voltage, and sub-threshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state-density at the semiconductor/insulator interface, and curing of the defects states in the band-gap of IZO.",
author = "A. Indluru and Terry Alford",
year = "2010",
doi = "10.1149/1.3481256",
language = "English (US)",
isbn = "9781566778244",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "337--344",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
}