Improved passivation of a-Si:H / c-Si interfaces through film restructuring

M. Z. Burrows, U. K. Das, S. Bowden, S. S. Hegedus, R. L. Opila, R. W. Birkmire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


The as-deposited passivation quality of amorphous silicon films on crystalline silicon surfaces is dependent on deposition conditions and resulting hydrogen bonding structure. However the initial surface passivation can be significantly improved by low temperature post-deposition anneal. For example an improvement in effective lifetime from 780 μsec as-deposited to 2080 μsec post-anneal is reported in the present work. This work probes the hydrogen bonding environment using monolayer resolution Brewster angle transmission Fourier transform infrared spectroscopy of 100 Å thick films. It is found that there is significant restructuring at the a-Si:H / c-Si interface upon annealing and a gain of mono-hydride bonding at the c-Si surface is detected. Calculations show an additional 3.56 - 4.50 × 1014 cm -2 mono-hydride bonding at c-Si surface due to annealing. The estimation of the surface hydride oscillator strength in transmission mode is reported for the first time to be 7.2 × 10-18 cm on Si (100) surface and 7.5 × 10-18 cm on Si (111).

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781605110363
StatePublished - 2008
Externally publishedYes
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 24 2008Mar 28 2008

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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