Impact of electronic density of states on electroluminescence refrigeration

S. Q. Yu; J. B. Wang; D. Ding; Shane Johnson; Dragica Vasileska; Yong-Hang Zhang

doi:10.1016/j.sse.2007.06.015

Impact of electronic density of states on electroluminescence refrigeration

S. Q. Yu, J. B. Wang, D. Ding, Shane Johnson, Dragica Vasileska, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Electroluminescence refrigeration in light emitting diodes is studied by taking into account carrier transport, carrier recombination, and influence of the dimensionality of electronic density of states (DOS) in active region. The cooling process happens when carriers transport from the metal contacts to the barrier layers. For a given bias voltage, the cooling power density decreases monotonically with the dimension of the DOS and increases as the carrier effective masses increases.

Original language	English (US)
Pages (from-to)	1387-1390
Number of pages	4
Journal	Solid-State Electronics
Volume	51
Issue number	10 SPEC. ISS
DOIs	https://doi.org/10.1016/j.sse.2007.06.015
State	Published - Oct 2007

Keywords

Density of states
Electroluminescence refrigeration
Semiconductor optical refrigeration
Thermoelectric cooling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2007.06.015

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title = "Impact of electronic density of states on electroluminescence refrigeration",

abstract = "Electroluminescence refrigeration in light emitting diodes is studied by taking into account carrier transport, carrier recombination, and influence of the dimensionality of electronic density of states (DOS) in active region. The cooling process happens when carriers transport from the metal contacts to the barrier layers. For a given bias voltage, the cooling power density decreases monotonically with the dimension of the DOS and increases as the carrier effective masses increases.",

keywords = "Density of states, Electroluminescence refrigeration, Semiconductor optical refrigeration, Thermoelectric cooling",

author = "Yu, {S. Q.} and Wang, {J. B.} and D. Ding and Shane Johnson and Dragica Vasileska and Yong-Hang Zhang",

year = "2007",

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T1 - Impact of electronic density of states on electroluminescence refrigeration

AU - Yu, S. Q.

AU - Wang, J. B.

AU - Ding, D.

AU - Johnson, Shane

AU - Vasileska, Dragica

AU - Zhang, Yong-Hang

PY - 2007/10

Y1 - 2007/10

N2 - Electroluminescence refrigeration in light emitting diodes is studied by taking into account carrier transport, carrier recombination, and influence of the dimensionality of electronic density of states (DOS) in active region. The cooling process happens when carriers transport from the metal contacts to the barrier layers. For a given bias voltage, the cooling power density decreases monotonically with the dimension of the DOS and increases as the carrier effective masses increases.

AB - Electroluminescence refrigeration in light emitting diodes is studied by taking into account carrier transport, carrier recombination, and influence of the dimensionality of electronic density of states (DOS) in active region. The cooling process happens when carriers transport from the metal contacts to the barrier layers. For a given bias voltage, the cooling power density decreases monotonically with the dimension of the DOS and increases as the carrier effective masses increases.

KW - Density of states

KW - Electroluminescence refrigeration

KW - Semiconductor optical refrigeration

KW - Thermoelectric cooling

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VL - 51

SP - 1387

EP - 1390

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10 SPEC. ISS

ER -

Impact of electronic density of states on electroluminescence refrigeration

Abstract

Keywords

ASJC Scopus subject areas

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