Impact ionization in silicon dioxide

D. K. Ferry

doi:10.1016/0038-1098(76)91237-0

Impact ionization in silicon dioxide

D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The dielectric strength of silicon dioxide is related to the breakdown field at which electron-hole pairs can be generated by inverse Auger scattering of hot electrons. This field is calculated to be about 3 × 10⁷ V/cm for a 300°K ambient oxide.

Original language	English (US)
Pages (from-to)	1051-1053
Number of pages	3
Journal	Solid State Communications
Volume	18
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(76)91237-0
State	Published - 1976

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(76)91237-0

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title = "Impact ionization in silicon dioxide",

abstract = "The dielectric strength of silicon dioxide is related to the breakdown field at which electron-hole pairs can be generated by inverse Auger scattering of hot electrons. This field is calculated to be about 3 × 107 V/cm for a 300°K ambient oxide.",

author = "Ferry, {D. K.}",

year = "1976",

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T1 - Impact ionization in silicon dioxide

AU - Ferry, D. K.

PY - 1976

Y1 - 1976

N2 - The dielectric strength of silicon dioxide is related to the breakdown field at which electron-hole pairs can be generated by inverse Auger scattering of hot electrons. This field is calculated to be about 3 × 107 V/cm for a 300°K ambient oxide.

AB - The dielectric strength of silicon dioxide is related to the breakdown field at which electron-hole pairs can be generated by inverse Auger scattering of hot electrons. This field is calculated to be about 3 × 107 V/cm for a 300°K ambient oxide.

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Impact ionization in silicon dioxide

Abstract

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