Impact ionization in silicon dioxide

D. K. Ferry

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The dielectric strength of silicon dioxide is related to the breakdown field at which electron-hole pairs can be generated by inverse Auger scattering of hot electrons. This field is calculated to be about 3 × 107 V/cm for a 300°K ambient oxide.

Original languageEnglish (US)
Pages (from-to)1051-1053
Number of pages3
JournalSolid State Communications
Issue number8
StatePublished - 1976

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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