@article{7122e1f5f8264a11b96548a4cdf4d0bd,
title = "Identification of point defects using high-resolution electron energy loss spectroscopy",
abstract = "Although there are many techniques that can detect bandgap states associated with point defects in the lattice, it is not routinely possible to determine the type of defect at submicron spatial resolution. Here we show that high-resolution electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope can locate and identify point defects with a resolution of about 10 nm in a wide-bandgap BAlN semiconductor. B interstitials, N vacancies, as well as other point defects have been experimentally detected using EELS and have been identified using density functional theory.",
author = "Shuo Wang and Katia March and Fernando Ponce and Peter Rez",
note = "Funding Information: The authors gratefully thank Dr. X. Li, Dr. T. Detchprohm, and Professor R. Dupuis for providing the samples used in this study. S.W. was supported by the National Science Foundation (NSF) under DMR-1411022, and by the NSF and the Department of Energy under NSF CA No. EEC-1041895. We gratefully acknowledge the use of facilities within the Eyring Materials Center at Arizona State University. Funding Information: The authors gratefully thank Dr. X. Li, Dr. T. Detchprohm, and Professor R. Dupuis for providing the samples used in this study. S.W. was supported by the National Science Foundation (NSF) under DMR-1411022, and by the NSF and the Department of Energy under NSF CA No. EEC-1041895. We gratefully acknowledge the use of facilities within the Eyring Materials Center at Arizona State University. Publisher Copyright: {\textcopyright} 2019 American Physical Society.",
year = "2019",
month = mar,
day = "18",
doi = "10.1103/PhysRevB.99.115312",
language = "English (US)",
volume = "99",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "11",
}