The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering