Hydrogen in crystalline semiconductors. A review of experimental results

N. M. Johnson; C. Doland; F. Ponce; J. Walker; G. Anderson

doi:10.1016/0921-4526(91)90104-M

Hydrogen in crystalline semiconductors. A review of experimental results

N. M. Johnson, C. Doland, F. Ponce, J. Walker, G. Anderson

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.

Original language	English (US)
Pages (from-to)	3-20
Number of pages	18
Journal	Physica B: Physics of Condensed Matter
Volume	170
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(91)90104-M
State	Published - Apr 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0921-4526(91)90104-M

Cite this

@article{bbfab1e854db480eb879867688af8020,

title = "Hydrogen in crystalline semiconductors. A review of experimental results",

abstract = "The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.",

author = "Johnson, {N. M.} and C. Doland and F. Ponce and J. Walker and G. Anderson",

year = "1991",

month = apr,

doi = "10.1016/0921-4526(91)90104-M",

language = "English (US)",

volume = "170",

pages = "3--20",

journal = "Physica B: Physics of Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Hydrogen in crystalline semiconductors. A review of experimental results

AU - Johnson, N. M.

AU - Doland, C.

AU - Ponce, F.

AU - Walker, J.

AU - Anderson, G.

PY - 1991/4

Y1 - 1991/4

N2 - The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.

AB - The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.

UR - http://www.scopus.com/inward/record.url?scp=0026142430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026142430&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(91)90104-M

DO - 10.1016/0921-4526(91)90104-M

M3 - Article

AN - SCOPUS:0026142430

SN - 0921-4526

VL - 170

SP - 3

EP - 20

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-4

ER -

Hydrogen in crystalline semiconductors. A review of experimental results

Abstract

ASJC Scopus subject areas

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