Hydrogen bonding in silicon-hydrogen alloys

J. C. Knights; G. Lucovsky; R. J. Nemanich

doi:10.1080/01418637808225790

Hydrogen bonding in silicon-hydrogen alloys

J. C. Knights, G. Lucovsky, R. J. Nemanich

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Abstract

Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH₄/Ar and SiH₄/D₂/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH₄. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)_x(Si₂H₄)_1-x. In contrast, for material deposited on to a substrate at a temperature T_s≥250°C, the hydrogen is incorporated onto Si-sites containing predominantly one H-atom.

Original language	English (US)
Pages (from-to)	467-475
Number of pages	9
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	37
Issue number	4
DOIs	https://doi.org/10.1080/01418637808225790
State	Published - Apr 1978
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Physics and Astronomy(all)

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title = "Hydrogen bonding in silicon-hydrogen alloys",

abstract = "Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH4/D2/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH4. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)x(Si2H4)1-x. In contrast, for material deposited on to a substrate at a temperature Ts≥250°C, the hydrogen is incorporated onto Si-sites containing predominantly one H-atom.",

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year = "1978",

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doi = "10.1080/01418637808225790",

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T1 - Hydrogen bonding in silicon-hydrogen alloys

AU - Knights, J. C.

AU - Lucovsky, G.

AU - Nemanich, R. J.

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N2 - Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH4/D2/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH4. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)x(Si2H4)1-x. In contrast, for material deposited on to a substrate at a temperature Ts≥250°C, the hydrogen is incorporated onto Si-sites containing predominantly one H-atom.

AB - Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH4/D2/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH4. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)x(Si2H4)1-x. In contrast, for material deposited on to a substrate at a temperature Ts≥250°C, the hydrogen is incorporated onto Si-sites containing predominantly one H-atom.

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Hydrogen bonding in silicon-hydrogen alloys

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