Hydrogen bonding in silicon-hydrogen alloys

J. C. Knights, G. Lucovsky, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

182 Scopus citations


Infra-red and Raman spectra have been obtained from thin films of silicon-hydrogen and silicon-hydrogen-deuterium alloys deposited from low pressure, r.f. excited plasmas in mixtures of SiH4/Ar and SiH4/D2/Ar respectively. The spectra are analysed using a valence-force-field model based on effective force constants determined from SiH4. For alloys deposited onto substrates held at 25°C it is concluded that the structure is best described as a pseudobinary alloy of the form (Si)x(Si2H4)1-x. In contrast, for material deposited on to a substrate at a temperature Ts≥250°C, the hydrogen is incorporated onto Si-sites containing predominantly one H-atom.

Original languageEnglish (US)
Pages (from-to)467-475
Number of pages9
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number4
StatePublished - Apr 1978
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)


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