Abstract
We present a theoretical investigation on the electrical behavior of submicrometer n+nn+ diode microwave generators. To this end we adopt a mixed scheme which uses space-homogeneous and stationary Monte Carlo simulations to provide the input parameters for a hydrodynamic analysis of the diode performances. Comparison between GaAs and InP made devices working at 400 K give similar results by predicting generation frequencies up to 700 GHz for an active region length of 0.2 μm.
Original language | English (US) |
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Pages (from-to) | 1456-1458 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 61 |
Issue number | 12 |
DOIs | |
State | Published - 1992 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)