We present a theoretical investigation on the electrical behavior of submicrometer n+nn+ diode microwave generators. To this end we adopt a mixed scheme which uses space-homogeneous and stationary Monte Carlo simulations to provide the input parameters for a hydrodynamic analysis of the diode performances. Comparison between GaAs and InP made devices working at 400 K give similar results by predicting generation frequencies up to 700 GHz for an active region length of 0.2 μm.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)