Abstract
Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place in GaAs MESFETs and in AlGaAs/GaAs HEMTs at high drain voltages. The dominant mechanism for the emission of photons with hv>E g is the recombination between impact ionization generated holes and channel electrons.
| Original language | English (US) |
|---|---|
| Article number | 142 |
| Pages (from-to) | B543-B545 |
| Journal | Semiconductor Science and Technology |
| Volume | 7 |
| Issue number | 3 B |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry