Abstract
In this work, we present silicon process compatible, stable and reliable (>108 cycles), high non-linearity ratio at a half-read voltage (>5 × 105), high speed (<60 ns), and low operating voltage (<3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays.
Original language | English (US) |
---|---|
Pages (from-to) | N143-N147 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 6 |
Issue number | 9 |
DOIs | |
State | Published - 2017 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials