Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

Mandar J. Gadre; Terry Alford

doi:10.1063/1.3619196

Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

Mandar J. Gadre, Terry Alford

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6×10¹⁹ cm^-3).

Original language	English (US)
Article number	051901
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3619196
State	Published - Aug 1 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3619196

Cite this

@article{f411ad71850845aa89d46c1f3b26182f,

title = "Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals",

abstract = "Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6×1019 cm-3).",

author = "Gadre, {Mandar J.} and Terry Alford",

note = "Funding Information: This work was partially supported by National Science Foundation (L. Hess, Grant No.DMR-0902277) for which the authors are greatly indebted. Research was sponsored by the Army Research Laboratory (ARL) and was accomplished under Cooperative Agreement No. W911NG-04-2-0005. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARL or the U.S. Government. ",

year = "2011",

month = aug,

day = "1",

doi = "10.1063/1.3619196",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

AU - Gadre, Mandar J.

AU - Alford, Terry

N1 - Funding Information: This work was partially supported by National Science Foundation (L. Hess, Grant No.DMR-0902277) for which the authors are greatly indebted. Research was sponsored by the Army Research Laboratory (ARL) and was accomplished under Cooperative Agreement No. W911NG-04-2-0005. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARL or the U.S. Government.

PY - 2011/8/1

Y1 - 2011/8/1

N2 - Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6×1019 cm-3).

AB - Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6×1019 cm-3).

UR - http://www.scopus.com/inward/record.url?scp=80051592397&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051592397&partnerID=8YFLogxK

U2 - 10.1063/1.3619196

DO - 10.1063/1.3619196

M3 - Article

AN - SCOPUS:80051592397

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051901

ER -

Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this