High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

M. D. Feuer; R. H. Hendel; R. A. Kiehl; J. C.M. Hwang; V. G. Keramidas; C. L. Allyn; R. Dingle

doi:10.1109/EDL.1983.25743

High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

M. D. Feuer
, R. H. Hendel
, R. A. Kiehl
, J. C.M. Hwang
, V. G. Keramidas
, C. L. Allyn
, R. Dingle

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

Original language	English (US)
Pages (from-to)	306-307
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	4
Issue number	9
DOIs	https://doi.org/10.1109/EDL.1983.25743
State	Published - Sep 1983
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1983.25743

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title = "High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors",

abstract = "We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.",

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year = "1983",

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AU - Feuer, M. D.

AU - Hendel, R. H.

AU - Kiehl, R. A.

AU - Hwang, J. C.M.

AU - Keramidas, V. G.

AU - Allyn, C. L.

AU - Dingle, R.

PY - 1983/9

Y1 - 1983/9

N2 - We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

AB - We report ring oscillators which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors (SDHT's) were used in a direct-coupled circuit. The GaAs/Al.3Ga.7 As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1 μm gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

High-Speed Low-Voltage Ring Oscillators Based on Selectively Doped Heterojunction Transistors

Abstract

ASJC Scopus subject areas

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