TY - JOUR
T1 - High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes
AU - Pan, Chih Chien
AU - Tanaka, Shinichi
AU - Wu, Feng
AU - Zhao, Yuji
AU - Speck, James S.
AU - Nakamura, Shuji
AU - Den Baars, Steven P.
AU - Feezel, Daniel
PY - 2012/6
Y1 - 2012/6
N2 - We demonstrate a small-area (0.1mm 2) semipolar (202̄ 1̄) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400 A/cm 2, respectively. The device showed little blue shift and had a narrow full width at half maximum (FWHM). Micro-electroluminescence (μ-EL) and scanning transmission electron microscope (STEM) images indicate a high-quality InGaN quantum well (QW) layer.
AB - We demonstrate a small-area (0.1mm 2) semipolar (202̄ 1̄) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400 A/cm 2, respectively. The device showed little blue shift and had a narrow full width at half maximum (FWHM). Micro-electroluminescence (μ-EL) and scanning transmission electron microscope (STEM) images indicate a high-quality InGaN quantum well (QW) layer.
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U2 - 10.1143/APEX.5.062103
DO - 10.1143/APEX.5.062103
M3 - Article
AN - SCOPUS:84862534603
SN - 1882-0778
VL - 5
JO - Applied Physics Express
JF - Applied Physics Express
IS - 6
M1 - 062103
ER -