Abstract
Researchers at Arizona state University have developed a semiconductor device, termed the "Bloch-HEMT" that exploits the phenomenon of Bloch oscillations to produce extremely high frequencies of radiation, up to the infrared region. This could lead to entire circuits operating at higher frequencies than ever before possible and could impact the state-of- the-art in communications.The inventors have fabricated and tested prototype devices according to this invention. In fact, devices have been tested at temperatures as low as 4.2 degrees Kelvin. The devices are capable of delivering a gate controlled negative differential conductivity. They will also provide both a detector and a source for far infra-red radiation.For more detailed information on this innovation, please refer to US Patent No. 4,872,038
Original language | English (US) |
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State | Published - Jan 1 1900 |