High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

D. K. Fork; F. A. Ponce; J. C. Tramontana; N. Newman; Julia M. Phillips; T. H. Geballe

doi:10.1063/1.104864

High critical current densities in epitaxial YBa₂Cu ₃O_7-δ thin films on silicon-on-sapphire

D. K. Fork
, F. A. Ponce
, J. C. Tramontana
, N. Newman
, Julia M. Phillips
, T. H. Geballe

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The use of silicon on sapphire (SOS) as a substrate for YBa ₂Cu₃O_7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×10⁶ A/cm² at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

Original language	English (US)
Pages (from-to)	2432-2434
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	21
DOIs	https://doi.org/10.1063/1.104864
State	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.104864

Cite this

@article{d08c43ebef4249b7a75d2be66c6fde16,

title = "High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire",

abstract = "The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 {\AA}) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.",

author = "Fork, \{D. K.\} and Ponce, \{F. A.\} and Tramontana, \{J. C.\} and N. Newman and Phillips, \{Julia M.\} and Geballe, \{T. H.\}",

year = "1991",

doi = "10.1063/1.104864",

language = "English (US)",

volume = "58",

pages = "2432--2434",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

AU - Fork, D. K.

AU - Ponce, F. A.

AU - Tramontana, J. C.

AU - Newman, N.

AU - Phillips, Julia M.

AU - Geballe, T. H.

PY - 1991

Y1 - 1991

N2 - The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

AB - The use of silicon on sapphire (SOS) as a substrate for YBa 2Cu3O7-δ allows the growth of thick (∼4000 Å) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.

UR - https://www.scopus.com/pages/publications/36449003391

UR - https://www.scopus.com/pages/publications/36449003391#tab=citedBy

U2 - 10.1063/1.104864

DO - 10.1063/1.104864

M3 - Article

AN - SCOPUS:36449003391

SN - 0003-6951

VL - 58

SP - 2432

EP - 2434

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

High critical current densities in epitaxial YBa₂Cu ₃O_7-δ thin films on silicon-on-sapphire

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this