Heteroepitaxial S1-x-yGexCy films on (100) Si substrates for future low-power applications

Terry Alford, A. E. Bair, Z. Atzmon, L. M. Stout, S. G. Balster, D. K. Schroder, R. J. Roedel

Research output: Contribution to journalArticlepeer-review


Thin heteroepitaxial films of S1-x-yGexCy have been investigated for potential use in low-power electronic applications. Films were grown on (100) Si substrates using atmospheric pressure chemical vapor deposition at 625 and 700 °C. The crystallinity, composition and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry and secondary ion mass spectrometry. The crystallinity of the films was very sensitive to the flow rate of C2H4 that served as the C source. S1-x-yGexCy films with up to 2.0 at.% C and 20 at.% Ge were epitaxial with good crystallinity. Current-voltage measurements were obtained from the electrical characterization of Si1-x-yGexCy Si heterojunction diodes. Stable layers and low diode turn-on voltage make the Si1-x-yGexCy Si structure an appropriate candidate for future low-power research.

Original languageEnglish (US)
Pages (from-to)632-636
Number of pages5
JournalThin Solid Films
Issue number1-2
StatePublished - Dec 1 1995


  • Carbon
  • Chemical vapour deposition
  • Germanium
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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