Heavy-Ion-Induced Displacement Damage Effects on WOx ECRAM

Matthew J. Marinella; Christopher H. Bennett; Brian Zutter; Max Siath; Matthew Spear; Gyorgy Vizkelethy; T. Patrick Xiao; Elliot Fuller; David Hughart; Sapan Agarwal; Yiyang Li; A. Alec Talin

doi:10.1109/TNS.2024.3360409

Heavy-Ion-Induced Displacement Damage Effects on WO_x ECRAM

Matthew J. Marinella, Christopher H. Bennett, Brian Zutter, Max Siath, Matthew Spear, Gyorgy Vizkelethy, T. Patrick Xiao, Elliot Fuller, David Hughart, Sapan Agarwal, Yiyang Li, A. Alec Talin

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Electrochemical random-access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog in-memory computing applications. Displacement damage in WO3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of 1011 cm-2), metal oxide ECRAM does not exhibit significant change, demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (1011 cm-2), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.

Original language	English (US)
Pages (from-to)	579-584
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	71
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2024.3360409
State	Published - Apr 1 2024

Keywords

Electrochemical random-access memory (ECRAM)
heavy ion irradiation
mobility
neuromorphic computing
nonvolatile memory
vacancies

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2024.3360409

Cite this

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title = "Heavy-Ion-Induced Displacement Damage Effects on WOx ECRAM",

abstract = "Electrochemical random-access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog in-memory computing applications. Displacement damage in WO3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of 1011 cm-2), metal oxide ECRAM does not exhibit significant change, demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (1011 cm-2), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.",

keywords = "Electrochemical random-access memory (ECRAM), heavy ion irradiation, mobility, neuromorphic computing, nonvolatile memory, vacancies",

author = "Marinella, {Matthew J.} and Bennett, {Christopher H.} and Brian Zutter and Max Siath and Matthew Spear and Gyorgy Vizkelethy and Xiao, {T. Patrick} and Elliot Fuller and David Hughart and Sapan Agarwal and Yiyang Li and Talin, {A. Alec}",

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AU - Marinella, Matthew J.

AU - Bennett, Christopher H.

AU - Zutter, Brian

AU - Siath, Max

AU - Spear, Matthew

AU - Vizkelethy, Gyorgy

AU - Xiao, T. Patrick

AU - Fuller, Elliot

AU - Hughart, David

AU - Agarwal, Sapan

AU - Li, Yiyang

AU - Talin, A. Alec

PY - 2024/4/1

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N2 - Electrochemical random-access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog in-memory computing applications. Displacement damage in WO3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of 1011 cm-2), metal oxide ECRAM does not exhibit significant change, demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (1011 cm-2), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.

AB - Electrochemical random-access memory (ECRAM) is an emerging nonvolatile memory device which is promising for analog in-memory computing applications. Displacement damage in WO3-x ECRAM was experimentally characterized for the first time using a 1 MeV Au beam. At moderate levels of displacement damage (below fluence of 1011 cm-2), metal oxide ECRAM does not exhibit significant change, demonstrating the suitability of ECRAM for applications such as spaceborne computing. At high fluences (1011 cm-2), where high concentrations of oxygen vacancies are created, channel conductivity was found to increase linearly with increasing vacancy concentration. A model of vacancy concentration versus conductivity allows the extraction of the mobility and initial doping concentration.

KW - Electrochemical random-access memory (ECRAM)

KW - heavy ion irradiation

KW - mobility

KW - neuromorphic computing

KW - nonvolatile memory

KW - vacancies

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