Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

C. W. Hu; A. Bell; Fernando Ponce; David Smith; I. S T Tsong

doi:10.1063/1.1514394

Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

C. W. Hu, A. Bell, Fernando Ponce, David Smith, I. S T Tsong

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42 Scopus citations

Abstract

Self-assembled nanometer-scale GaN quantum dots were fabricated on 6H-SiC(0001) substrates via the formation of Ga liquid droplets and their subsequent nitridation with a supersonic gas source seeded with NH₃ molecules. The entire process was observed and controlled in situ and in real time in a low-energy electron microscope. The microstructure of the quantum dots was studied by high-resolution cross-sectional transmission electron microscopy illustrating the perfectly coherent wurtzite structure of GaN quantum dots with 5 nm base width. Spatially resolved cathodoluminescence spectra yield the characteristic band edge emission near 3.48 eV for larger size GaN dots.

Original language	English (US)
Pages (from-to)	3236-3238
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	17
DOIs	https://doi.org/10.1063/1.1514394
State	Published - Oct 21 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism",

abstract = "Self-assembled nanometer-scale GaN quantum dots were fabricated on 6H-SiC(0001) substrates via the formation of Ga liquid droplets and their subsequent nitridation with a supersonic gas source seeded with NH3 molecules. The entire process was observed and controlled in situ and in real time in a low-energy electron microscope. The microstructure of the quantum dots was studied by high-resolution cross-sectional transmission electron microscopy illustrating the perfectly coherent wurtzite structure of GaN quantum dots with 5 nm base width. Spatially resolved cathodoluminescence spectra yield the characteristic band edge emission near 3.48 eV for larger size GaN dots.",

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T1 - Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

AU - Hu, C. W.

AU - Bell, A.

AU - Ponce, Fernando

AU - Smith, David

AU - Tsong, I. S T

PY - 2002/10/21

Y1 - 2002/10/21

N2 - Self-assembled nanometer-scale GaN quantum dots were fabricated on 6H-SiC(0001) substrates via the formation of Ga liquid droplets and their subsequent nitridation with a supersonic gas source seeded with NH3 molecules. The entire process was observed and controlled in situ and in real time in a low-energy electron microscope. The microstructure of the quantum dots was studied by high-resolution cross-sectional transmission electron microscopy illustrating the perfectly coherent wurtzite structure of GaN quantum dots with 5 nm base width. Spatially resolved cathodoluminescence spectra yield the characteristic band edge emission near 3.48 eV for larger size GaN dots.

AB - Self-assembled nanometer-scale GaN quantum dots were fabricated on 6H-SiC(0001) substrates via the formation of Ga liquid droplets and their subsequent nitridation with a supersonic gas source seeded with NH3 molecules. The entire process was observed and controlled in situ and in real time in a low-energy electron microscope. The microstructure of the quantum dots was studied by high-resolution cross-sectional transmission electron microscopy illustrating the perfectly coherent wurtzite structure of GaN quantum dots with 5 nm base width. Spatially resolved cathodoluminescence spectra yield the characteristic band edge emission near 3.48 eV for larger size GaN dots.

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Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

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