Growth of high-quality GaAs using trimethylgallium and diethylarsine

R. Bhat; M. A. Koza; B. J. Skromme

doi:10.1063/1.97908

Growth of high-quality GaAs using trimethylgallium and diethylarsine

R. Bhat
, M. A. Koza
, B. J. Skromme

Research output: Contribution to journal › Article › peer-review

79 Scopus citations

Abstract

In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×10¹⁴ cm^-3 and a liquid nitrogen temperature mobility as high as 64 600 cm²/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.

Original language	English (US)
Pages (from-to)	1194-1196
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	17
DOIs	https://doi.org/10.1063/1.97908
State	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.97908

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title = "Growth of high-quality GaAs using trimethylgallium and diethylarsine",

abstract = "In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3{\texttimes}1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.",

author = "R. Bhat and Koza, \{M. A.\} and Skromme, \{B. J.\}",

year = "1987",

doi = "10.1063/1.97908",

language = "English (US)",

volume = "50",

pages = "1194--1196",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

number = "17",

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T1 - Growth of high-quality GaAs using trimethylgallium and diethylarsine

AU - Bhat, R.

AU - Koza, M. A.

AU - Skromme, B. J.

PY - 1987

Y1 - 1987

N2 - In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.

AB - In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.

UR - https://www.scopus.com/pages/publications/0041341861

UR - https://www.scopus.com/pages/publications/0041341861#tab=citedBy

U2 - 10.1063/1.97908

DO - 10.1063/1.97908

M3 - Article

AN - SCOPUS:0041341861

SN - 0003-6951

VL - 50

SP - 1194

EP - 1196

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Growth of high-quality GaAs using trimethylgallium and diethylarsine

Abstract

ASJC Scopus subject areas

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