Pulsed Laser Deposition has been used to synthesize Ba(Co,Zn) 1/3Nb2/3O3 (BCZN) dielectric thin films on MgO (001) substrates. The BCZN films are epitaxial and have an orientation of (001) // MgO (001) and (100) // MgO (100) when deposited at substrate temperatures above 500 C. The film grown at 800 C has the best structural quality, with an X-ray diffraction rocking curve width of ∼0.5 and a channeling Rutherford Backscattering Spectrometry χmin value of 8.8%. The surface roughness decreases monotonically with increasing substrate temperature, with a ∼3 nm root mean square roughness value for the films deposited at 700 C. Optical transmission measurements indicate a strong direct transition at ∼4 eV and a refractive index of 2.0 in the visible range. A low-frequency dielectric constant of 34 was measured using a planar interdigital contact structure. The resistivity of the film is 3×1010 Ω cm at room temperature and has a thermal activation energy of 0.66 eV.

Original languageEnglish (US)
Pages (from-to)81-85
Number of pages5
JournalJournal of Crystal Growth
StatePublished - Jan 1 2014


  • A3. Epitaxy
  • A3. Pulsed Laser Deposition
  • B1. Ba(Co,Zn)Nb O
  • B2. Microwave dielectrics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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