Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure

Dragica Vasileska; C. Prasad; H. H. Wieder; D. K. Ferry

doi:10.1063/1.1555279

Green's function approach for transport calculation in a In_0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructure

Dragica Vasileska
, C. Prasad
, H. H. Wieder
, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A study was performed on the gate voltage dependence of the low-field electron mobility in a In_0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructures. The Green's function approach was used for the transport calculation of the heterostructures. The mobility results for the structure revealed that alloy-disorder scattering was the dominant degradation mechanism.

Original language	English (US)
Pages (from-to)	3359-3363
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1555279
State	Published - Mar 15 2003

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1555279

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title = "Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure",

abstract = "A study was performed on the gate voltage dependence of the low-field electron mobility in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructures. The Green's function approach was used for the transport calculation of the heterostructures. The mobility results for the structure revealed that alloy-disorder scattering was the dominant degradation mechanism.",

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AU - Vasileska, Dragica

AU - Prasad, C.

AU - Wieder, H. H.

AU - Ferry, D. K.

PY - 2003/3/15

Y1 - 2003/3/15

N2 - A study was performed on the gate voltage dependence of the low-field electron mobility in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructures. The Green's function approach was used for the transport calculation of the heterostructures. The mobility results for the structure revealed that alloy-disorder scattering was the dominant degradation mechanism.

AB - A study was performed on the gate voltage dependence of the low-field electron mobility in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructures. The Green's function approach was used for the transport calculation of the heterostructures. The mobility results for the structure revealed that alloy-disorder scattering was the dominant degradation mechanism.

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Green's function approach for transport calculation in a In_0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructure

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