Graphite in the bilayer regime: In-plane transport

D. B. Gutman; S. Tongay; H. K. Pal; D. L. Maslov; A. F. Hebard

doi:10.1103/PhysRevB.80.045418

Graphite in the bilayer regime: In-plane transport

D. B. Gutman, S. Tongay, H. K. Pal, D. L. Maslov, A. F. Hebard

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

Original language	English (US)
Article number	045418
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	80
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.80.045418
State	Published - Aug 6 2009
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.80.045418

Cite this

@article{1015474a777b4590b620b1364c56ace5,

title = "Graphite in the bilayer regime: In-plane transport",

abstract = "An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.",

author = "Gutman, {D. B.} and S. Tongay and Pal, {H. K.} and Maslov, {D. L.} and Hebard, {A. F.}",

year = "2009",

month = aug,

day = "6",

doi = "10.1103/PhysRevB.80.045418",

language = "English (US)",

volume = "80",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Graphite in the bilayer regime

T2 - In-plane transport

AU - Gutman, D. B.

AU - Tongay, S.

AU - Pal, H. K.

AU - Maslov, D. L.

AU - Hebard, A. F.

PY - 2009/8/6

Y1 - 2009/8/6

N2 - An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

AB - An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

UR - http://www.scopus.com/inward/record.url?scp=69949188904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69949188904&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.80.045418

DO - 10.1103/PhysRevB.80.045418

M3 - Article

AN - SCOPUS:69949188904

SN - 1098-0121

VL - 80

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

M1 - 045418

ER -

Graphite in the bilayer regime: In-plane transport

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this