Graphene/GaN Schottky diodes: Stability at elevated temperatures

S. Tongay; M. Lemaitre; T. Schumann; K. Berke; B. R. Appleton; B. Gila; A. F. Hebard

doi:10.1063/1.3628315

Graphene/GaN Schottky diodes: Stability at elevated temperatures

S. Tongay, M. Lemaitre, T. Schumann, K. Berke, B. R. Appleton, B. Gila, A. F. Hebard

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the diodes show excellent recovery with improved rectification. We attribute these effects to the thermal stability of graphene, which acts like an impenetrable barrier to the diffusion of contaminants across the interface, and to changes in the interface band alignment associated with thermally induced dedoping of graphene.

Original language	English (US)
Article number	102102
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3628315
State	Published - Sep 5 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Graphene/GaN Schottky diodes: Stability at elevated temperatures",

abstract = "Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the diodes show excellent recovery with improved rectification. We attribute these effects to the thermal stability of graphene, which acts like an impenetrable barrier to the diffusion of contaminants across the interface, and to changes in the interface band alignment associated with thermally induced dedoping of graphene.",

author = "S. Tongay and M. Lemaitre and T. Schumann and K. Berke and Appleton, {B. R.} and B. Gila and Hebard, {A. F.}",

note = "Funding Information: This work is supported by the Office of Naval Research (ONR) under Contract Number 00075094 (BA) and by the National Science Foundation (NSF) under Contract Number 1005301 (AFH).",

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AU - Tongay, S.

AU - Lemaitre, M.

AU - Schumann, T.

AU - Berke, K.

AU - Appleton, B. R.

AU - Gila, B.

AU - Hebard, A. F.

N1 - Funding Information: This work is supported by the Office of Naval Research (ONR) under Contract Number 00075094 (BA) and by the National Science Foundation (NSF) under Contract Number 1005301 (AFH).

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Y1 - 2011/9/5

N2 - Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the diodes show excellent recovery with improved rectification. We attribute these effects to the thermal stability of graphene, which acts like an impenetrable barrier to the diffusion of contaminants across the interface, and to changes in the interface band alignment associated with thermally induced dedoping of graphene.

AB - Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy and temperature-dependent current-voltage measurements. The Schottky barriers formed between GaN and mechanically transferred graphene display rectification that is preserved up to 550 K with the diodes eventually becoming non-rectifying above 650 K. Upon cooling, the diodes show excellent recovery with improved rectification. We attribute these effects to the thermal stability of graphene, which acts like an impenetrable barrier to the diffusion of contaminants across the interface, and to changes in the interface band alignment associated with thermally induced dedoping of graphene.

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Graphene/GaN Schottky diodes: Stability at elevated temperatures

Abstract

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