Glide along non-basal slip planes in InGaN epilayers

S. Srinivasan, L. Geng, Fernando Ponce, Y. Narukawa, S. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


We have observed a systematic nucleation of misfit dislocations at the InGaN/GaN heterointerface. This occurs when InGaN films are grown on an epitaxially laterally overgrown GaN substrate with a reduced dislocation density. The misfit dislocations are aligned along 〈1100〉 directions forming a symmetric hexagonal array. Potential wurtzite slip systems were analysed by extending the Matthews-Blakeslee model to include Peierls forces. Due to an inactive basal plane in the c-growth direction, non-basal slip is necessary for plastic relaxation. The active slip system was identified to be {1122} 〈1123〉. The possibility of activation of other slip systems is also discussed.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Number of pages4
StatePublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003


Other5th International Conference on Nitride Semiconductors, ICNS 2003

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry


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