Ge/Si(100) Island and Wetting Layer Composition

Yangting Zhang, Jeffery Drucker

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Etching water soluble Ge-oxides was used to investigate Si interdiffusion into epitaxial Ge/Si(100) samples. The Ge coverage, θ Ge, was measured using Rutherford backscattering spectrometry (RBS) before and after water etching of samples grown at substrate temperatures between 400°C and 650°C. θ Ge was correlated with sample morphology determined using atomic force microscopy (AFM). The local Ge concentration was qualitatively assessed using energy dispersive x-ray (EDX) analysis. For samples grown at T=400°C, water completely dissolves the islands and no Ge is detected by RBS. For samples grown at T=600 and 650°C, AFM detects no change in the surface morphology and RBS indicates that 650°C decreases by about 3 monolayers (ML). These results suggest that for growth at T=400°C, both the islands and wetting layer are relatively pure Ge while for growth at T≥600°C, the wetting layer is Ge rich compare to the SiGe alloy islands, EDX confirms this conclusion detecting no Ge signal between islands for etched samples grown at T≥600°C. Our results suggest that for growth at T≥600°C, Si interdiffusion into islands is through the region underneath the islands instead of from the wetting layer.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM.J. Aziz, N.C. Bartelt, I. Berbezier, J.B. Hannon, S.J. Hearne
Number of pages6
StatePublished - 2002
EventMorphological and Compositional Evolution of Thin Films - Boston, MA, United States
Duration: Dec 2 2002Dec 5 2002


OtherMorphological and Compositional Evolution of Thin Films
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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