Gate-controlled reverse recovery for characterization of LDMOS body diode

Arash Elhami Khorasani; Mark Griswold; Terry Alford

doi:10.1109/LED.2014.2353301

Gate-controlled reverse recovery for characterization of LDMOS body diode

Arash Elhami Khorasani, Mark Griswold, Terry Alford

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different directions with each having different lifetime values. By studying the effects of diode reverse bias and gate voltage on the current flow direction during the reverse recovery, we present a simple approach to extract meaningful lifetime values, which can be used to determine material quality at different locations in the drift region of the LDMOS devices.

Original language	English (US)
Article number	6895242
Pages (from-to)	1079-1081
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	11
DOIs	https://doi.org/10.1109/LED.2014.2353301
State	Published - Nov 1 2014

Keywords

Carrier lifetimes
laterally-diffused MOSFET
semiconductor defects
semiconductor device measurements
semiconductor materials
silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2353301

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title = "Gate-controlled reverse recovery for characterization of LDMOS body diode",

abstract = "Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different directions with each having different lifetime values. By studying the effects of diode reverse bias and gate voltage on the current flow direction during the reverse recovery, we present a simple approach to extract meaningful lifetime values, which can be used to determine material quality at different locations in the drift region of the LDMOS devices.",

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AU - Griswold, Mark

AU - Alford, Terry

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N2 - Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different directions with each having different lifetime values. By studying the effects of diode reverse bias and gate voltage on the current flow direction during the reverse recovery, we present a simple approach to extract meaningful lifetime values, which can be used to determine material quality at different locations in the drift region of the LDMOS devices.

AB - Reverse recovery behavior is a useful tool for monitoring lifetime variations in the body diode of power MOSFETs. However, correct interpretation of the laterally diffused MOSFET (LDMOS) reverse recovery is challenging and requires special attention. This is due to the fact that the stored charges in the LDMOS drift region can flow from two different directions with each having different lifetime values. By studying the effects of diode reverse bias and gate voltage on the current flow direction during the reverse recovery, we present a simple approach to extract meaningful lifetime values, which can be used to determine material quality at different locations in the drift region of the LDMOS devices.

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KW - laterally-diffused MOSFET

KW - semiconductor defects

KW - semiconductor device measurements

KW - semiconductor materials

KW - silicon

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Gate-controlled reverse recovery for characterization of LDMOS body diode

Abstract

Keywords

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