GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy

J. Fan; L. Ouyang; X. Liu; J. K. Furdyna; David Smith; Yong-Hang Zhang

doi:10.1016/j.jcrysgro.2013.02.023

GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy

J. Fan
, L. Ouyang
, X. Liu
, J. K. Furdyna
, David Smith
, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A series of GaSb/ZnTe double-heterostructures proposed for laser diode applications was successfully grown by molecular beam epitaxy using GaSb (001) substrates. During the growth of GaSb on ZnTe, a temperature ramp was applied for the region near the GaSb/ZnTe interface to protect the material from damage due to thermal evaporation. Post-growth characterization using high-resolution X-ray diffraction and transmission electron microscopy reveals low defect density and coherent interface morphology. Strong photoluminescence emission is observed at temperatures up to 200 K, indicating good optical properties.

Original language	English (US)
Pages (from-to)	122-125
Number of pages	4
Journal	Journal of Crystal Growth
Volume	371
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.02.023
State	Published - May 15 2013

Keywords

Characterization
Heterojunction semiconductor devices
Molecular beam epitaxy
Semiconducting II-VI materials
Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2013.02.023

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@article{206dccf3f5bc4cd6b33f411bbee7cabe,

title = "GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy",

abstract = "A series of GaSb/ZnTe double-heterostructures proposed for laser diode applications was successfully grown by molecular beam epitaxy using GaSb (001) substrates. During the growth of GaSb on ZnTe, a temperature ramp was applied for the region near the GaSb/ZnTe interface to protect the material from damage due to thermal evaporation. Post-growth characterization using high-resolution X-ray diffraction and transmission electron microscopy reveals low defect density and coherent interface morphology. Strong photoluminescence emission is observed at temperatures up to 200 K, indicating good optical properties.",

keywords = "Characterization, Heterojunction semiconductor devices, Molecular beam epitaxy, Semiconducting II-VI materials, Semiconducting III-V materials",

author = "J. Fan and L. Ouyang and X. Liu and Furdyna, \{J. K.\} and David Smith and Yong-Hang Zhang",

note = "Funding Information: The work at ASU was partially supported by Science Foundation Arizona , Contracts SRG 0339-08 and AFOSR Grant FA9550-10-1–0129 . ASU and Notre Dame were also jointly supported by an NSF grant ( ECCS-1002072 ). The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy, the Center for Solid State Electronics Research, and the LeRoyEyring Center for Solid State Science at Arizona State University.",

year = "2013",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2013.02.023",

language = "English (US)",

volume = "371",

pages = "122--125",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy

AU - Fan, J.

AU - Ouyang, L.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Smith, David

AU - Zhang, Yong-Hang

N1 - Funding Information: The work at ASU was partially supported by Science Foundation Arizona , Contracts SRG 0339-08 and AFOSR Grant FA9550-10-1–0129 . ASU and Notre Dame were also jointly supported by an NSF grant ( ECCS-1002072 ). The authors gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy, the Center for Solid State Electronics Research, and the LeRoyEyring Center for Solid State Science at Arizona State University.

PY - 2013/5/15

Y1 - 2013/5/15

N2 - A series of GaSb/ZnTe double-heterostructures proposed for laser diode applications was successfully grown by molecular beam epitaxy using GaSb (001) substrates. During the growth of GaSb on ZnTe, a temperature ramp was applied for the region near the GaSb/ZnTe interface to protect the material from damage due to thermal evaporation. Post-growth characterization using high-resolution X-ray diffraction and transmission electron microscopy reveals low defect density and coherent interface morphology. Strong photoluminescence emission is observed at temperatures up to 200 K, indicating good optical properties.

AB - A series of GaSb/ZnTe double-heterostructures proposed for laser diode applications was successfully grown by molecular beam epitaxy using GaSb (001) substrates. During the growth of GaSb on ZnTe, a temperature ramp was applied for the region near the GaSb/ZnTe interface to protect the material from damage due to thermal evaporation. Post-growth characterization using high-resolution X-ray diffraction and transmission electron microscopy reveals low defect density and coherent interface morphology. Strong photoluminescence emission is observed at temperatures up to 200 K, indicating good optical properties.

KW - Characterization

KW - Heterojunction semiconductor devices

KW - Molecular beam epitaxy

KW - Semiconducting II-VI materials

KW - Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/84901619398

UR - https://www.scopus.com/pages/publications/84901619398#tab=citedBy

U2 - 10.1016/j.jcrysgro.2013.02.023

DO - 10.1016/j.jcrysgro.2013.02.023

M3 - Article

AN - SCOPUS:84901619398

SN - 0022-0248

VL - 371

SP - 122

EP - 125

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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