GaN Vertical-Channel Junction Field-Effect Transistors with Regrown p-GaN by MOCVD

Chen Yang, Houqiang Fu, Viswanathan Naveen Kumar, Kai Fu, Hanxiao Liu, Xuanqi Huang, Tsung Han Yang, Hong Chen, Jingan Zhou, Xuguang Deng, Jossue Montes, Fernando A. Ponce, Dragica Vasileska, Yuji Zhao

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


We report an experimental demonstration of GaN-based vertical-channel junction field-effect transistors (VC-JFETs). A p-GaN regrowth by metalorganic chemical vapor deposition (MOCVD) and a subsequent self-planarization process were developed to fabricate the GaN VC-JFETs. Fin-like channel regions were patterned by electron beam lithography (EBL) and aligned to {m} -plane or {a} -plane. The electrical properties of lateral and vertical p-n junctions were characterized to verify the effectiveness of the p-GaN regrowth. Both VC-JFETs with {m} -plane and {a} -plane channels show decent gate modulation. We further discussed important factors that may affect the device performance including interfacial impurities and nonuniform acceptor distribution. This work highlights the successful demonstration of GaN VC-JFETs and lateral p-n junctions by an etch-then-regrow process, providing valuable information and reference for the further development of GaN power electronics.

Original languageEnglish (US)
Article number9159872
Pages (from-to)3972-3977
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 2020


  • Gallium nitride
  • junction field-effect transistor (JFET)
  • p-GaN regrowth
  • selective area doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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