TY - GEN
T1 - GaN HEMTs reliability the role of shielding
AU - Padmanabhan, Balaji
AU - Vasileska, Dragica
AU - Goodnick, Stephen
PY - 2012
Y1 - 2012
N2 - Electron trapping in the defect sites of the GaN layer and the interfaces of various layers in HEMT devices are responsible for current collapse in AlGaN/GaN HEMTs. The trapping of electrons is mainly affected by the electric field at the gate edge in these devices. In the present work, an Electro-thermal simulator that couples the Monte Carlo transport kernel, the Poisson kernel and a thermal solver has been developed at ASU. This simulator has been used to model the physics behind the effect of shielding on the thermal and field characteristics of these devices. This work is a first study of this type.
AB - Electron trapping in the defect sites of the GaN layer and the interfaces of various layers in HEMT devices are responsible for current collapse in AlGaN/GaN HEMTs. The trapping of electrons is mainly affected by the electric field at the gate edge in these devices. In the present work, an Electro-thermal simulator that couples the Monte Carlo transport kernel, the Poisson kernel and a thermal solver has been developed at ASU. This simulator has been used to model the physics behind the effect of shielding on the thermal and field characteristics of these devices. This work is a first study of this type.
UR - http://www.scopus.com/inward/record.url?scp=84869179646&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2012.6322177
DO - 10.1109/NANO.2012.6322177
M3 - Conference contribution
AN - SCOPUS:84869179646
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -