GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Melissa J. Archer; Daniel C. Law; Shoghig Mesropian; Moran Haddad; Christopher M. Fetzer; Arthur C. Ackerman; Corinne Ladous; Richard R. King; Harry A. Atwater

doi:10.1063/1.2887904

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Melissa J. Archer
, Daniel C. Law
, Shoghig Mesropian
, Moran Haddad
, Christopher M. Fetzer
, Arthur C. Ackerman
, Corinne Ladous
, Richard R. King
, Harry A. Atwater

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

Large area, crack-free GaInPGaAs double junction solar cells were grown by metal organic chemical vapor deposition on GeSi templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.

Original language	English (US)
Article number	103503
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2887904
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2887904

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@article{223ee20fd54443b095eadad61b478860,

title = "GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates",

abstract = "Large area, crack-free GaInPGaAs double junction solar cells were grown by metal organic chemical vapor deposition on GeSi templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.",

author = "Archer, \{Melissa J.\} and Law, \{Daniel C.\} and Shoghig Mesropian and Moran Haddad and Fetzer, \{Christopher M.\} and Ackerman, \{Arthur C.\} and Corinne Ladous and King, \{Richard R.\} and Atwater, \{Harry A.\}",

note = "Funding Information: The authors would like to acknowledge the National Renewable Energy Laboratory through Subcontract No. XAT-4-33624-10 for support of the Caltech and Spectrolab portions of this work. One of us (M.J.A.) acknowledges fellowship support from the National Science Foundation. Support for TEM work was provided by the Caltech Kavli Nanoscience Institute and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR-0520565.",

year = "2008",

doi = "10.1063/1.2887904",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

AU - Archer, Melissa J.

AU - Law, Daniel C.

AU - Mesropian, Shoghig

AU - Haddad, Moran

AU - Fetzer, Christopher M.

AU - Ackerman, Arthur C.

AU - Ladous, Corinne

AU - King, Richard R.

AU - Atwater, Harry A.

N1 - Funding Information: The authors would like to acknowledge the National Renewable Energy Laboratory through Subcontract No. XAT-4-33624-10 for support of the Caltech and Spectrolab portions of this work. One of us (M.J.A.) acknowledges fellowship support from the National Science Foundation. Support for TEM work was provided by the Caltech Kavli Nanoscience Institute and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR-0520565.

PY - 2008

Y1 - 2008

N2 - Large area, crack-free GaInPGaAs double junction solar cells were grown by metal organic chemical vapor deposition on GeSi templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.

AB - Large area, crack-free GaInPGaAs double junction solar cells were grown by metal organic chemical vapor deposition on GeSi templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.

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UR - https://www.scopus.com/pages/publications/40849094608#tab=citedBy

U2 - 10.1063/1.2887904

DO - 10.1063/1.2887904

M3 - Article

AN - SCOPUS:40849094608

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103503

ER -

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Abstract

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