@article{223ee20fd54443b095eadad61b478860,
title = "GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates",
abstract = "Large area, crack-free GaInPGaAs double junction solar cells were grown by metal organic chemical vapor deposition on GeSi templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.",
author = "Archer, {Melissa J.} and Law, {Daniel C.} and Shoghig Mesropian and Moran Haddad and Fetzer, {Christopher M.} and Ackerman, {Arthur C.} and Corinne Ladous and King, {Richard R.} and Atwater, {Harry A.}",
note = "Funding Information: The authors would like to acknowledge the National Renewable Energy Laboratory through Subcontract No. XAT-4-33624-10 for support of the Caltech and Spectrolab portions of this work. One of us (M.J.A.) acknowledges fellowship support from the National Science Foundation. Support for TEM work was provided by the Caltech Kavli Nanoscience Institute and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR-0520565.",
year = "2008",
doi = "10.1063/1.2887904",
language = "English (US)",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",
}