Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, S. W. Koch, W. Rühle, Shane Johnson, J. B. Wang, Yong-Hang Zhang

Research output: Contribution to journalConference articlepeer-review


Formation of self-organized Ga(AsSb) quantum-islands during growth is shown to occur in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands (QIs) are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%, which is the origin of the confinement. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density. The influence of size and density of such structures as well as the mechanisms of growth are discussed.

Original languageEnglish (US)
Pages (from-to)411-414
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number2
StatePublished - 2009
Event9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors, NOEKS 9 - Klink/Muritz, Germany
Duration: May 26 2008May 29 2008

ASJC Scopus subject areas

  • Condensed Matter Physics


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