TY - GEN
T1 - Full quantum mechanical simulation of ultra-small silicon devices in three-dimensions
T2 - 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
AU - Gilbert, M. J.
AU - Ferry, D. K.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - A three dimensional ballistic quantum transport model for a quantum wire silicon MOSFET is presented. A non-uniform mesh with finer grid spacing in the high potential regions, was applied to the simulation of a quantum wire SOI MOSFET with a narrow channel (8 nm). As a result of this, the applied gate voltage reduces the channel barrier potential, thus the channel populates and depopulates with electrons alternatively. The results show that the electrons entering the channel have an exaggerated interaction with the channel dopants causing the formation of resonant slates within the channel.
AB - A three dimensional ballistic quantum transport model for a quantum wire silicon MOSFET is presented. A non-uniform mesh with finer grid spacing in the high potential regions, was applied to the simulation of a quantum wire SOI MOSFET with a narrow channel (8 nm). As a result of this, the applied gate voltage reduces the channel barrier potential, thus the channel populates and depopulates with electrons alternatively. The results show that the electrons entering the channel have an exaggerated interaction with the channel dopants causing the formation of resonant slates within the channel.
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M3 - Conference contribution
AN - SCOPUS:21844435253
SN - 0780386493
SN - 9780780386495
T3 - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
SP - 63
EP - 64
BT - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Y2 - 24 October 2004 through 27 October 2004
ER -