Full-band particle-based analysis of device scaling for 3D tri-gate FETs

P. Chiney, J. Branlard, S. Aboud, Marco Saraniti, Stephen Goodnick

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this work, a 25 nm gate length three-dimensional tri-gate SOI FET with a wrap around gate geometry is studied using a full-band particle-based simulation tool. The tri-gate FETs have shown superior scalability over planar device structures, reduction of short channel effects, higher drive currents and excellent gate-channel controllability compared to their planar counterparts. Simulations were performed by scaling the length and the width of the tri-gate SOI FET channel to study its short-channel and short-width effects. The influence of the scaling on the dynamic response has also been explored by performing a frequency analysis on the device.

Original languageEnglish (US)
Pages (from-to)45-49
Number of pages5
JournalJournal of Computational Electronics
Issue number1-2
StatePublished - Apr 2005


  • Frequency analysis
  • Monte Carlo simulation
  • Omega FET
  • Scaling
  • Tri-gate FETs
  • p-FETs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering


Dive into the research topics of 'Full-band particle-based analysis of device scaling for 3D tri-gate FETs'. Together they form a unique fingerprint.

Cite this