Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations

J. Branlard; S. Aboud; P. Osuch; Stephen Goodnick; Marco Saraniti

doi:10.1515/mcma.2004.10.3-4.227

Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations

J. Branlard, S. Aboud, P. Osuch, Stephen Goodnick, Marco Saraniti

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small-signal response of semiconductor devices. Several GaAs and Si devices have been simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.

Original language	English (US)
Pages (from-to)	227-233
Number of pages	7
Journal	Monte Carlo Methods and Applications
Volume	10
Issue number	3-4
DOIs	https://doi.org/10.1515/mcma.2004.10.3-4.227
State	Published - Dec 2004

Keywords

Fourier Decomposition
Full-band
GaAs MESFETs
Particle-based simulation
SOI MOSFETs
Small-signal analysis

ASJC Scopus subject areas

Statistics and Probability
Applied Mathematics

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10.1515/mcma.2004.10.3-4.227

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abstract = "The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small-signal response of semiconductor devices. Several GaAs and Si devices have been simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.",

keywords = "Fourier Decomposition, Full-band, GaAs MESFETs, Particle-based simulation, SOI MOSFETs, Small-signal analysis",

author = "J. Branlard and S. Aboud and P. Osuch and Stephen Goodnick and Marco Saraniti",

year = "2004",

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AU - Branlard, J.

AU - Aboud, S.

AU - Osuch, P.

AU - Goodnick, Stephen

AU - Saraniti, Marco

PY - 2004/12

Y1 - 2004/12

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AB - The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small-signal response of semiconductor devices. Several GaAs and Si devices have been simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.

KW - Fourier Decomposition

KW - Full-band

KW - GaAs MESFETs

KW - Particle-based simulation

KW - SOI MOSFETs

KW - Small-signal analysis

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JO - Monte Carlo Methods and Applications

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ER -

Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations

Abstract

Keywords

ASJC Scopus subject areas

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