Formation of stable dopant interstitials during ion implantation of silicon

S. J. Pennycook, R. J. Culbertson, J. Narayan

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy contribution. We propose that the complexes are simply interstitial dopant atoms (in a split (100) interstitialcy configuration) that are particularly stable in the case of group V dopants. As they decay self-interstitials are released and cause the transient-enhanced diffusion.

Original languageEnglish (US)
Pages (from-to)476-492
Number of pages17
JournalJournal of Materials Research
Issue number3
StatePublished - Jun 1986
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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