Floating gate ISFET for therapeutic drug screening of breast cancer cells

Sahil Shah, Karen Anderson, Jennifer Blain Christen, Jennifer Hasler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a floating gate Ion Sensitive Field Effect Transistor (ISFET) to monitor the activity of breast cancer cells. We use an ISFET to monitor the change in pH of the cell culture media and to observe the apoptosis of the breast cancer cells when treated with staurosporine. Since ISFETs suffer from inherent mismatch and drift in the threshold voltage, predominantly caused due to accumulation of ions on the surface of the gate, we have integrated a floating gate ISFET to calibrate the device. Floating gate ISFETs have been used to program the threshold voltage of the device either by hot electron injection, Fowler-Nordheim tunneling, and UV to remove charges. In this work we use hot electron injection to precisely program the device and tunneling as a global erase. This enables us to precisely record the changes in pH. These floating gate devices have been fabricated in 0.5 μm CMOS process.

Original languageEnglish (US)
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages229-232
Number of pages4
ISBN (Print)9781479934324
DOIs
StatePublished - Jan 1 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/TerritoryAustralia
CityMelbourne, VIC
Period6/1/146/5/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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