TY - GEN
T1 - Floating gate ISFET for therapeutic drug screening of breast cancer cells
AU - Shah, Sahil
AU - Anderson, Karen
AU - Blain Christen, Jennifer
AU - Hasler, Jennifer
PY - 2014/1/1
Y1 - 2014/1/1
N2 - This paper presents a floating gate Ion Sensitive Field Effect Transistor (ISFET) to monitor the activity of breast cancer cells. We use an ISFET to monitor the change in pH of the cell culture media and to observe the apoptosis of the breast cancer cells when treated with staurosporine. Since ISFETs suffer from inherent mismatch and drift in the threshold voltage, predominantly caused due to accumulation of ions on the surface of the gate, we have integrated a floating gate ISFET to calibrate the device. Floating gate ISFETs have been used to program the threshold voltage of the device either by hot electron injection, Fowler-Nordheim tunneling, and UV to remove charges. In this work we use hot electron injection to precisely program the device and tunneling as a global erase. This enables us to precisely record the changes in pH. These floating gate devices have been fabricated in 0.5 μm CMOS process.
AB - This paper presents a floating gate Ion Sensitive Field Effect Transistor (ISFET) to monitor the activity of breast cancer cells. We use an ISFET to monitor the change in pH of the cell culture media and to observe the apoptosis of the breast cancer cells when treated with staurosporine. Since ISFETs suffer from inherent mismatch and drift in the threshold voltage, predominantly caused due to accumulation of ions on the surface of the gate, we have integrated a floating gate ISFET to calibrate the device. Floating gate ISFETs have been used to program the threshold voltage of the device either by hot electron injection, Fowler-Nordheim tunneling, and UV to remove charges. In this work we use hot electron injection to precisely program the device and tunneling as a global erase. This enables us to precisely record the changes in pH. These floating gate devices have been fabricated in 0.5 μm CMOS process.
UR - http://www.scopus.com/inward/record.url?scp=84907408380&partnerID=8YFLogxK
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U2 - 10.1109/ISCAS.2014.6865107
DO - 10.1109/ISCAS.2014.6865107
M3 - Conference contribution
AN - SCOPUS:84907408380
SN - 9781479934324
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 229
EP - 232
BT - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Y2 - 1 June 2014 through 5 June 2014
ER -