TY - GEN
T1 - Finite-vs. infinite-source emitters in silicon photovoltaics
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
AU - Laine, Hannu S.
AU - Vahanissi, Ville
AU - Liu, Zhengjun
AU - Huang, Haibing
AU - Magana, Ernesto
AU - Morishige, Ashley E.
AU - Khelifati, Nabil
AU - Husein, Sebastian
AU - Lai, Barry
AU - Bertoni, Mariana
AU - Bouhafs, Djoudi
AU - Buonassisi, Tonio
AU - Fenning, David P.
AU - Savin, Hele
N1 - Funding Information:
Use of the Advanced Photon Source at Argonne National Laboratory was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Aalto University authors were supported by Finnish Technology Agency under the project “NANOSOLAR” (project No. 1109/31/2012). The provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre is acknowledged. Authors from MIT and ASU were supported by the National Science Foundation and the Department of Energy under NSF CA No. EEC-1041895. H.S.L. thanks the Finnish Cultural Foundation and the Fulbright-Technology Industries of Finland Grant. Z.L. acknowledges Aalto ELEC Doctoral School funding. N.K. is grateful to the General Direction of Scientific Research and Technological Development (GDSRTD / Algeria) for funding. E.M. was supported by the Initiative for Maximizing Student Development Fellowship through the
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion- implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
AB - Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion- implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
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U2 - 10.1109/PVSC.2017.8366089
DO - 10.1109/PVSC.2017.8366089
M3 - Conference contribution
AN - SCOPUS:85048468967
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 876
EP - 880
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 25 June 2017 through 30 June 2017
ER -